•  
  •  
 

Bulletin of Chinese Academy of Sciences (Chinese Version)

Keywords

commanding heights of science and technology, original innovation, disruptive innovation, chip manufacturing process revolution

Document Type

Strategy & Policy Decision Research

Abstract

Original and disruptive innovation is the foundation for tackling key technological challenges and nurturing the development of new forms of productive forces. The breakthrough of FinFET (Fin field-effect transistor) technology, a frontier manufacturing process for chips, represents a typical example of original and disruptive innovation. This breakthrough extended Moore’s Law, catalyzed the transition of semiconductor manufacturing from 2D to 3D structures, and significantly advanced the global high-tech industry, positioning it at the core of international technological competition. This study reviews the breakthrough journey of FinFET technology, specifically focusing on its development stages from “scientific discovery—formation of new technological pathways—systematization of new technologies”. The study identifies that the driving mechanism behind the breakthrough of FinFET technology largely stems from the pivotal role of strategic scientific teams. Additionally, by building an advanced research network supported by government and industry, a deep integration of government-industry-academia collaboration was formed. Furthermore, various innovation competitions between different entities fostered cooperation, promoting the systematization, iteration, and continuous breakthroughs of the technology. The development laws of original and disruptive innovation provides both theoretical and practical insights for China to seize the technological high ground and build a strong technological nation.

First page

1963

Last Page

1970

Language

Chinese

Publisher

Bulletin of Chinese Academy of Sciences

References

1. 周文, 许凌云. 论新质生产力：内涵特征与重要着力点. 改革, 2023, (10): 1-13. Zhou W, Xu L Y. On new quality productivity: Connotative characteristics and important focus. Reform, 2023, (10): 1-13. (in Chinese)

2. Christensen C M, Raynor M E. The Innovator’s Solution: Creating and Sustaining Successful Growth. Boston, MA: Harvard Business Review Press, 2013.

3. 张立超, 刘怡君. 技术轨道的跃迁与技术创新的演化发展. 科学学研究, 2015, 33(1): 137-145. Zhang L C, Liu Y J. Study on the transition of technology trajectory and the evolution of technological innovation. Studies in Science of Science, 2015, 33(1): 137-145. (in Chinese)

4. Christensen C M. The Innovator’s Dilemma: When New Technologies Cause Great Firms to Fail. Boston, MA: Harvard Business Review Press, 2015.

5. 余江, 陈凤, 郭玥. 现代化产业体系中科技创新与产业创新的深度融合：全球新一代光刻系统的启示. 中国科学院院刊, 2024, 39(7): 1141-1152. Yu J, Chen F, Guo Y. Deep integration of technological innovation and industrial innovation in modern industrial system: Inspiration from global new generation lithography systems. Bulletin of Chinese Academy of Sciences, 2024, 39(7): 1141-1152. (in Chinese)

6. 黄如, 黎明, 安霞, 等. 后摩尔时代集成电路的新器件技术. 中国科学：信息科学, 2012, 42(12): 1529-1543. Huang R, Li M, An X, et al. New device technologies of integrated circuit in post-Moore era. Scientia Sinica (Informationis), 2012, 42(12): 1529-1543. (in Chinese)

7. 方晓霞, 李晓华. 颠覆性创新、场景驱动与新质生产力发展. 改革, 2024, (4): 31-40. Fang X X, Li X H. Disruptive innovation, scenarios-driven, and the development of new quality productive forces. Reform, 2024, (4): 31-40. (in Chinese)

8. Kapetaniou C, Rieple A. The role of business ecosystems in the building of disruptive innovations// Academy of Management Proceedings. Briarcliff Manor, NY: Academy of Management. 2017: 15200

9. Hisamoto D, Kaga T, Kawamoto Y, et al. A fully depleted lean-channel transistor (DELTA)-a novel vertical ultra thin SOI MOSFET// International Technical Digest on Electron Devices Meeting. Washington, DC: IEEE, 1989: 833-836.

10. Huang X J, Lee W C, Kuo C, et al. Sub 50-nm finfet: Pmos// International Electron Devices Meeting. Washington, DC: IEEE, 1999: 67-70.

11. 余江, 刘佳丽, 甘泉, 等. 以跨学科大纵深研究策源重大原始创新：新一代集成电路光刻系统突破的启示. 中国科学院院刊, 2020, 35(1): 112-117. Yu J, Liu J L, Gan Q, et al. Major original innovation based on interdisciplinary research: International insights from breakthrough of new generation of lithography system. Bulletin of Chinese Academy of Sciences, 2020, 35(1): 112-117. (in Chinese)

12. 曹晓阳, 魏永静, 李莉, 等. DARPA的颠覆性技术创新及其启示. 中国工程科学, 2018, 20(6): 122-128. Cao X Y, Wei Y Z, Li L, et al. Enlightenment of disruptive technological innovation of DARPA. Strategic Study of CAE, 2018, 20(6): 122-128. (in Chinese)

13. O’Reagan D, Fleming L. The finfet breakthrough and networks of innovation in the semiconductor industry, 1980-2005: Applying digital tools to the history of technology. Technology and Culture, 2018, 59(2): 251-288.

Download
Request a Copy

Share

COinS