Bulletin of Chinese Academy of Sciences (Chinese Version)
Keywords
China, chip, integrated circuit, semiconductor
Document Type
Avoid Middle-technology Trap and Achieve Chinese Path to Modernization
Abstract
Due to China’s great attention to and strong support for the chip industry, China’s chip technology level has made considerable progress. Nevertheless, compared with the United States, Europe, Japan, South Korea, and other countries, there is still a big gap. Specially, in the high-end chip product market, the scenario that China is subject to others has not been fundamentally changed. This study finds that to solve the stuck neck problem of China’s chip industry, it is needed to analyze internal institutional factors. China’s chip technology progress requires joint promotion from multiple actors, namely, government, enterprises, universities and research institutions to jointly promote. In the process of technological progress, these actors have different motives and face different institutional constraints, with such motives and collaboration, the technological progress could be effectively promoted. This study analyzes the obstacles in the process of impeding various actors to promote technological progress in detail. It is concluded that in order to achieve greater progress in China’s chip industrial technology, it is necessary to carry out more extensive and profound reforms, binding advantageous resources together to overcome technical problems, avoid resource waste, effectively use industrial policies, and put market-oriented enterprises at the core of the technological innovation system.
First page
1665
Last Page
1674
Language
Chinese
Publisher
Bulletin of Chinese Academy of Sciences
References
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Recommended Citation
TAN, Rui
(2023)
"How does China’s chip industry overcome middle-technology trap?,"
Bulletin of Chinese Academy of Sciences (Chinese Version): Vol. 38
:
Iss.
11
, Article 9.
DOI: https://doi.org/10.16418/j.issn.1000-3045.20230803002
Available at:
https://bulletinofcas.researchcommons.org/journal/vol38/iss11/9
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