Development and Thinking of Silicon Photonics Heterogenous Integration

Authors

Zihao WANG, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, ChinaFollow
Ting WANG, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, China
Jianjun ZHANG, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China Songshan Lake Materials Laboratory, Dongguan 523808, ChinaFollow

Keywords

photonic integration; silicon photonics; heterogenous integration

Document Type

Advanced Materials Science Development Strategy and Innovative Practice

Abstract

Integrated photonics are fast-developing research field for next generation information technology. Current silicon photonic integrated chips strongly benefit from low-cost and high-density integration properties of existing CMOS technology. But limited by the physical properties of silicon, it is not a perfect material for different types of optoelectronic devices, such as laser sources, modulators, and infrared detectors. Therefore, heterogeneous integration is proposed by combining the advantages of CMOS process and superior opto-electric properties of heterogenous material systems, that can be an essential step towards next generation integrated optoelectronic chips. Here, this paper introduces the rapid progress of integrated photonics nationally and worldwide, while discusses the potential directions and opportunities in this field.

First page

360

Last Page

367

Language

Chinese

Publisher

Bulletin of Chinese Academy of Sciences

References

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Recommended Citation

WANG, Zihao; WANG, Ting; and ZHANG, Jianjun (2022) "Development and Thinking of Silicon Photonics Heterogenous Integration," Bulletin of Chinese Academy of Sciences (Chinese Version): Vol. 37 : Iss. 3 , Article 11.
DOI: https://doi.org/10.16418/j.issn.1000-3045.20211208005
Available at: https://bulletinofcas.researchcommons.org/journal/vol37/iss3/11